Phase Separation and Bulk p-n Transition in Single Crystals of Bi2Te2Se Topological Insulator

被引：42
|
作者：
Mi, Jian-Li [1 ,2 ]
Bremholm, Martin [1 ,2 ]
Bianchi, Marco [2 ,3 ]
Borup, Kasper [1 ,2 ]
Johnsen, Simon [1 ,2 ]
Sondergaard, Martin [1 ,2 ]
Guan, Dandan [2 ,3 ]
Hatch, Richard C. [2 ,3 ]
Hofmann, Philip [2 ,3 ]
Iversen, Bo B. [1 ,2 ]
机构：
[1] Aarhus Univ, Dept Chem, Ctr Mat Crystallog, DK-8000 Aarhus C, Denmark
[2] Aarhus Univ, iNANO, DK-8000 Aarhus C, Denmark
[3] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Bi2Te2Se; topological insulators; thermoelectrics; crystal growth; phase separation; QUANTUM OSCILLATIONS; ELECTRONIC-STRUCTURE; DIRAC CONE; SURFACE; BI2SE3; GROWTH; STATE;
D O I：
10.1002/adma.201203542
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Separation of ordered and disordered phases is found along the growth axis of a Bi2Te2Se crystal rod. A high bulk resistivity is found in phase II, which is an ideal candidate for investigation of the transport properties of the surface states. The bulk insulating feature of phase II is caused by the opposing effects of different types of defects.
引用
收藏
页码：889 / 893
页数：5
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