Dielectric properties of Al | V2O5 | Al thin film sandwich structures

被引：6
|
作者：
Ramana, CV
Hussain, OM
Naidu, BS
Julien, C
机构：
[1] Univ Paris 06, UMR CNRS 7603, Lab Milieux Desordonnes & Heterogenes, F-75252 Paris 05, France
[2] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 60卷 / 03期
关键词：
V2O5 thin films; electron beam evaporation; dielectric properties;
D O I：
10.1016/S0921-5107(99)00086-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Vanadium pentoxide thin films were prepared by the electron beam evaporation technique onto Coming 7059 glass substrates kept at a temperature of T-s= 423 K. The dielectric properties of Al \ V2O5 \ Al thin film sandwich structures were studied in the frequency range 0.1-100 kHz and in the temperature range 125-450 K. Both the dielectric constant and the dielectric loss factor were found to depend on frequency and temperature. The activation energy obtained for the dielectric relaxation process was about 0.36 eV. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：173 / 178
页数：6
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