Effect of electrodes on crystallization and electrical properties of ferroelectric PZT films deposited by rf magnetron sputtering

The electrical properties and crystallization process of Pb(Zr-0.4,Ti-0.6)O-3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline RuOx/SiO2/Si have been studied. It is found that the amorphous as-deposited thin film, processed by rapid thermal annealing (RTA), is transformed to a perovskite PZT at about 700 degrees C. It is pointed out that the ''heating rates'' to reach 700 degrees C affect the electrical properties of such films: TEM analysis reveal different grain sizes as a function of the heating rate. The XRD show that an oriented (111) PZT is promoted when the film is annealed to the temperatures of 800 degrees C for 5 secondes. For these annealing conditions, the electrical properties of such structure depend strongly on the deposition conditions of PZT. Our process studies show that a thin film PZT deposited on Pt or RuO1.65 at 200 degrees C and 1 Pa argon pressure gives good hysteresis loop with high values of Ps and Pr (about 20 and 30 mu C/cm(2) on Pt and RuO1.65 respectively) and low leakage current about 10(-11) A/cm(2) on Pt and 10(-6) A/cm(2) on RuO1.65.