Simulation Methodology for 2D random Network of CNTs Field-Effect Transistors

被引：0
|
作者：
Joo, Min-Kyu [1 ]
Mouis, Mireille [1 ]
Kim, Gyu-Tae
Kim, Un Jeong
Ghibaudo, Gerard [1 ]
机构：
[1] Grenoble INP MINATEC, IMEP LAHC, F-38016 Grenoble, France
来源：
2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) | 2013年
关键词：
Carbon nanotube (CNT); percolation theory; SPICE simulation; sensor applications; THIN-FILM TRANSISTORS; CARBON NANOTUBES; HIGH-PERFORMANCE; ELECTRONICS; CIRCUITS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (l(d)) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (R-sd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.
引用
收藏
页码：198 / 201
页数：4
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