Simulation Methodology for 2D random Network of CNTs Field-Effect Transistors

Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (l(d)) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (R-sd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.