W-Band, Broadband 2W GaN MMIC

被引：51

作者：

Schellenberg, James ^{[1
]}

Kim, Bumjin ^{[1
]}

Phan, Trong ^{[1
]}

机构：

[1] QuinStar Technol Inc, Torrance, CA 90505 USA

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年

关键词：

GaN; monolithic microwave integrated circuits (MMIC); solid-state power amplifier (SSPA); W-band;

D O I：

10.1109/MWSYM.2013.6697656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the first high-power GaN MMIC covering 70 percent of W-band (75-110 GHz). Using an on-chip traveling-wave power combiner circuit, it achieves power levels of greater than 1 W CW over the 80 to 100 GHz band and a peak power of 2 W CW at 84 GHz. Operating in a pulsed mode (10% duty), this MMIC produces a peak power of 3.2 W at 86 GHz. This work represents the first application of an on-chip combining network to simultaneously achieve high power levels and wide bandwidths at W-band frequencies.

引用

页数：4

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