A Nonlinear Switched State-Space Model for Capacitive RF DACs

被引：17

作者：

Trampitsch, Stefan ^{[1
,2
]}

Markovic, Jovan ^{[1
,3
]}

Ossmann, Patrick ^{[4
]}

Fritzin, Jonas ^{[5
]}

Zaleski, Jan ^{[3
]}

Mayer, Christian ^{[3
]}

Fulde, Michael ^{[5
]}

Pretl, Harald ^{[3
,6
]}

Springer, Andreas ^{[7
]}

Huemer, Mario ^{[7
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Signal Proc, A-4040 Linz, Austria

[2] Intel Austria GmbH, A-9524 Villach, Austria

[3] Danube Mobile Commun Engn GmbH & Co KG, A-4040 Linz, Austria

[4] Sivers IMA AB, S-16429 Stockholm, Sweden

[5] Intel Deutschland GmbH, D-85579 Neubiberg, Germany

[6] Johannes Kepler Univ Linz, Inst Integrated Circuits, A-4040 Linz, Austria

[7] Johannes Kepler Univ Linz, Christian Doppler Lab Digitally Assisted RF Trans, A-4040 Linz, Austria

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2017年 / 64卷 / 06期

关键词：

Switched-capacitor (SC) digital-to-analog converter (DAC); state-space model (SSM); capacitive DAC; switched-capacitor power amplifier (scpa); circuit modeling;

D O I：

10.1109/TCSI.2017.2666773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a nonlinear state-space model (SSM) for a low power 28-nm complementary metal-oxide-semiconductor switched-capacitor digital-to-analog converter. The proposed model utilizes current-voltage (I-V) input and output relationships for passive devices, which are described by a set of first-order differential equations. The proposed model significantly increases accuracy when compared with the state-of-the-art models. The SSM simulation results have been verified using SpectreRF transistor-level simulations and validated by on-chip measurements.

引用

页码：1342 / 1353

页数：12

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