Electrochemical evaluation of the roles of chelating reagents in Cd ion adsorption on CdS surface for the successive ionic layer adsorption and reaction (SILAR) deposition

被引:10
|
作者
Sasagawa, M [1 ]
Nosaka, Y [1 ]
机构
[1] Nagaoka Univ Technol, Dept Chem, Niigata 9402188, Japan
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 2002年 / 536卷 / 1-2期
关键词
CdS; chelating reagent; deposition; stripping voltammetry;
D O I
10.1016/S0022-0728(02)01213-5
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We evaluated the effect of the chelating reagents in the successive ionic layer adsorption and reaction (SILAR) process by monitoring the formation of one layer of CdS on the S surface of CdS layers prepared by a successive under potential deposition (upd) method. Anodic stripping voltammetry was adopted to measure the amount of CdS deposited on the An substrate. Among the chelating reagents examined, the order of the ability to enhance the deposition by dipping was cysteine > (none) > mercaptoethylamine > triethanolamine much greater than ethylenediamine. Considering the stability constant of the chelatmg reagents to Cd ions, the present experimental result showed that tight binding of Cd atoms to the surface S atoms is an important step in the deposition of CdS by the SILAR method. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:141 / 144
页数:4
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