Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices

被引：24

作者：

Huang, Chun-Yang ^{[1
,2
]}

Jieng, Jheng-Hong ^{[1
,2
]}

Jang, Wen-Yueh ^{[3
]}

Lin, Chen-Hsi ^{[3
]}

Tseng, Tseung-Yuen ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Winbond Elect Corp, Hsinchu 30010, Taiwan

来源：

ECS SOLID STATE LETTERS | 2013年 / 2卷 / 08期

关键词：

LOW-POWER; HFO2; ZRO2; FILMS;

D O I：

10.1149/2.006308ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of complex HfO2/Al2O3 layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al2O3 layers in HfO2 devices. In addition, the crystallization temperature of HfO2 based RRAM devices can also be improved by insetting Al2O3 layers in HfO2 film. Compared with pure HfO2 device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO2/Al2O3 layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure. (c) 2013 The Electrochemical Society. All rights reserved.

引用

页码：P63 / P65

页数：3

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