A 330 GHz Active Frequency Quadrupler in InP DHBT Transferred-Substrate Technology

被引：0
|
作者：
Hossain, M. [1 ]
Nosaeva, K. [1 ]
Weimann, N. [1 ]
Krozer, V. [1 ]
Heinrich, W. [1 ]
机构：
[1] FBH, Leibniz Inst Hochstfrequenztech, D-12489 Berlin, Germany
来源：
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年
关键词：
InP double heterojunction bipolar transistor (DHBT); monolithic microwave integrated circuit (MMIC); millimeter wave (mm-wave); terahertz (THz); transferred-substrate (TS) process;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 mu m transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves the power handling capability of the circuit. The quadrupler delivers -7 dBm output power at 325 GHz, at a DC consumption of only 40 mW, which corresponds to 0.5 % of efficiency. It achieves 90 GHz bandwidth and exhibits very low unwanted harmonics. The circuit utilizes a balanced architecture. The results demonstrate the potential of the InP TS.
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页数：4
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