Molecular beam epitaxy of GaN on a substrate of MoS2 layered compound

The feasibility of MoS2 layered compound as a substrate for GaN growth was investigated. GaN films were successfully grown on MoS2 by plasma-enhanced molecular beam epitaxy and the crystal quality of GaN on MoS2 was compared with that on Al2O3. For GaN grown on MoS2 substrate, it was found that the surface flatness observed by atomic force microscopy, stress in the film measured by Raman spectroscopy, optical properties measured by photoluminescence spectroscopy, and threading dislocation density observed by transmission electron microscopy show superior properties compared with that grown on Al2O3 These results suggest the layered compound such as MoS2. which has no dangling bonds on the surface and has lattice mismatching of 0.9% to GaN, has high potential for a substrate of GaN growth.