Metalorganic molecular beam epitaxy of GaN thin films on a sapphire substrate

被引:0
|
作者
Kim, Min-Ho [1 ]
Lee, Sung-Nam [1 ]
Park, Nae-Man [1 ]
Park, Seong-Ju [1 ]
机构
[1] Department of Materials Science, Eng. Ctr. for Electron. Mat. Res., Kwangju Inst. of Sci. and Technology, Kwangju 500-712, Korea, Republic of
来源
| 1600年 / JJAP, Tokyo卷 / 39期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Metalorganic molecular beam epitaxy of GaN thin films on a sapphire substrate
    Kim, MH
    Lee, SN
    Park, NM
    Park, SJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6170 - 6173
  • [2] InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
    Aderhold, J
    Davydov, VY
    Fedler, F
    Klausing, H
    Mistele, D
    Rotter, T
    Semchinova, O
    Stemmer, J
    Graul, J
    JOURNAL OF CRYSTAL GROWTH, 2001, 222 (04) : 701 - 705
  • [3] Growth evolution of cubic-GaN on sapphire (0001) substrate by metalorganic molecular beam epitaxy
    Suda, J
    Kurobe, T
    Matsunami, H
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 437 - 440
  • [4] GaN growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy
    Yoshimoto, M
    Hatanaka, A
    Itoh, H
    Matsunami, H
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 92 - 97
  • [5] Growth evolution of cubic-GaN on sapphire (0 0 0 1) substrate by metalorganic molecular beam epitaxy
    Suda, Jun
    Kurobe, Tatsuro
    Matsunami, Hiroyuki
    Journal of Crystal Growth, 1999, 201 : 437 - 440
  • [6] Molecular beam epitaxy of highly oriented pentacene thin films on an atomically flat sapphire substrate
    Itaka, K
    Myojin, N
    Yamashiro, M
    Yamaguchi, J
    Koinuma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08): : 6249 - 6251
  • [7] Structural properties of GaN films grown on sapphire by molecular beam epitaxy
    Zhu, Q
    Botchkarev, A
    Kim, W
    Aktas, O
    Salvador, A
    Sverdlov, B
    Morkoc, H
    Tsen, SCY
    Smith, DJ
    APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1141 - 1143
  • [8] Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire
    Romano, LT
    Krusor, BS
    Singh, R
    Moustakas, TD
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 285 - 289
  • [9] Improved quality GaN films grown by molecular beam epitaxy on sapphire
    Reifsnider, JM
    Gotthold, DW
    Holmes, AL
    Streetman, BG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1278 - 1281