Metalorganic molecular beam epitaxy of GaN thin films on a sapphire substrate

被引:0
|
作者
Kim, Min-Ho [1 ]
Lee, Sung-Nam [1 ]
Park, Nae-Man [1 ]
Park, Seong-Ju [1 ]
机构
[1] Department of Materials Science, Eng. Ctr. for Electron. Mat. Res., Kwangju Inst. of Sci. and Technology, Kwangju 500-712, Korea, Republic of
来源
| 1600年 / JJAP, Tokyo卷 / 39期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Growth and characterization of GaN epilayer on sapphire substrate by ammonia gas source molecular beam epitaxy
    Kurai, S
    Kudo, S
    Okazaki, T
    Taguchi, T
    Rosamond, M
    van Hove, J
    Chow, P
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 213 - 216
  • [22] Investigation of MoS2 growth on GaN/sapphire substrate using molecular beam epitaxy
    Al Khalfioui, Mohamed
    Dau, Minh Tuan
    Bouyid, Zineb
    Florea, Ileana
    Brault, Julien
    Michon, Adrien
    Cordier, Yvon
    Boucaud, Philippe
    JOURNAL OF CRYSTAL GROWTH, 2025, 652
  • [23] Growth of GaN films on porous SiC substrate by molecular-beam epitaxy
    Yun, F
    Reshchikov, MA
    He, L
    Morkoç, H
    Inoki, CK
    Kuan, TS
    APPLIED PHYSICS LETTERS, 2002, 81 (22) : 4142 - 4144
  • [24] Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy
    Ebel, R
    Fehrer, M
    Figge, S
    Einfeldt, S
    Selke, H
    Hommel, D
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 433 - 436
  • [25] Characterization of GaN/AIN films with different polarities grown by molecular beam epitaxy on sapphire substrates
    Huang, D
    Litton, CW
    Reshchikov, MA
    Visconti, P
    Yun, F
    King, T
    Baski, AA
    Jasinski, J
    Liliental-Weber, Z
    Morkoç, H
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 771 - 776
  • [26] Growth of GaN and AlN thin films by laser induced molecular beam epitaxy
    Gross, M
    Henn, G
    Schroder, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 16 - 19
  • [27] Properties of GaN thin films prepared by laser induced molecular beam epitaxy
    Gross, M
    Henn, G
    Schroder, H
    PROCEEDINGS OF THE SECOND SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1998, 97 (34): : 236 - 243
  • [28] Er doping of GaN during growth by metalorganic molecular beam epitaxy
    MacKenzie, JD
    Abernathy, CR
    Pearton, SJ
    Hommerich, U
    Seo, JT
    Wilson, RG
    Zavada, JM
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2710 - 2712
  • [29] Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy
    Cheng, TS
    Foxon, CT
    Ren, GB
    Orton, JW
    Melnik, YV
    Nikitina, IP
    Nikolaev, AE
    Novikov, SV
    Dmitriev, VA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (07) : 917 - 920
  • [30] Mechanical properties of the GaN thin films deposited on sapphire substrate
    Yu, G
    Ishikawa, H
    Egawa, T
    Soga, T
    Watanabe, J
    Jimbo, T
    Umeno, M
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 701 - 705