The temperature dependence of Hall mobility of the oxide thin film In2O3-ZnO

We report that temperature dependence of Hall mobility of the strongly disordered films In2O3-ZnO. We made targets by mixing ZnO into In2O3 at the ratio 0.5 similar to 2 wt%. Sputtering those targets on glass substrate by DC magnetron method, amorphous films with 25 nm thickness were obtained. By annealing at T = 150 similar to 350 degrees C in the air, oxygen defect decreased and the conductance decreased. We obtained films with conductivity 0.2mS/m similar to 300S/m. In the temperature range T = 90 similar to 300K, we measured the Hall effect of these films. The density of electron was 4 x 10(18) similar to 1.2 x 10(22) m(-3) at the room temperature. The Hall mobility. mu(H) shows the thermal-activation-like temperature dependence. mu(H) = AT (1/2) exp(E-B/k(B)T), where E-B is activation energy. By fitting, we obtained E-B = 60 similar to 86 meV.