Potentiality of silicon optical modulator based on free-carrier absorption

被引：7
|
作者：
Tabei, Tetsuo [1 ]
Hirata, Tomoki [1 ]
Kajikawa, Kenta [1 ]
Sunami, Hideo [1 ]
机构：
[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Hiroshima 7398527, Japan
来源：
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/IEDM.2007.4419129
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Light propagation in metal-oxide-semiconductor (MOS) optical modulator based on free-carrier absorption is analyzed theoretically and compared with experimental results. The coincidence is sufficient enough to confirm validity of the simulation. However, practical use of the modulator is limited since extinction ratio is still small due to weak interaction between light and inversion carrier at around 1.55 mu m light.
引用
收藏
页码：1023 / 1026
页数：4
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