A 0.5-nW 29ppm/°C Voltage Reference Circuit

被引：0
|
作者：
Zhuang, Haoyu [1 ]
Tang, He [1 ]
Peng, Xizhu [1 ]
Zhu, Zhangming [2 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu, Sichuan, Peoples R China
[2] Xidian Univ, Sch Microelect, Xian, Shaanxi, Peoples R China
来源：
2018 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2018) | 2018年
关键词：
voltage reference; low power; sub nW; BANDGAP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a novel sub-nW voltage reference circuit for ultra-low-power systems. It saves power by using a 2-transistor (2-T) structure that produces a stable voltage based on transistor threshold voltage difference. A well-controlled bias current is produced by a novel current generator that reduces the temperature coefficient (TC). Fabricated in 180nm CMOS process, this reference circuit consumes only 0.5nW power. It achieves an average TC of 29ppm/degrees C and a line sensitivity (LS) of 0.18%/V, measured across 22 chips.
引用
收藏
页码：107 / 110
页数：4
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