Effect of laser power on microstructure and dielectric properties of BaTi5O11 films prepared by laser chemical vapor deposition method

BaTi5O11 films were prepared on Pt/Ti/SiO2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (P (L)) on microstructure and dielectric properties of the BaTi5O11 films was investigated. With increasing P (L) from 62 to 108 W, the deposition temperature (T (dep)) monotonously increased from 872 to 951 K. At T (dep) = 920 K (P (L) = 90 W), the BaTi5O11 film had preferred orientation. At T (dep) a parts per thousand yen 938 K (P (L) a parts per thousand yen 98 W), the preferred orientation changed to . The deposition rate (R (dep)) was 154.8-177.6 mu m h(-1). With increasing T (dep), the surface morphologies changed from rectangular to pyramidal, and the dielectric constant (epsilon (r)) increased from 18.3 to 21.4 at 1 MHz and 300 K.