An Efficient Spectral Element Method for Semiconductor Transient Simulation

被引：0

作者：

Bao, Huaguang ^{[1
]}

Ding, Dazhi ^{[1
]}

Bi, Junjian ^{[2
]}

Gu, WenYang ^{[1
]}

Chen, Rushan ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Dept Commun Engn, Nanjing 210094, Jiangsu, Peoples R China

[2] Ordnance Engn Coll, Key Lab Electromagnet Environm Effect, Shijiazhuang 05003, Peoples R China

来源：

APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL | 2016年 / 31卷 / 11期

关键词：

Gauss-Lobatto-Legendre (GLL) polynomials; mix-order basis function; PIN diode; Spectral Element Method (SEM);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient spectral element method (SEM) based on Gauss-Lobatto-Legendre (GLL) polynomials is proposed for the semiconductor transient simulation. The fully coupled Newton iteration method is employed to solve the nonlinear drift-diffusion model. The mix-order basis functions with different variables and domains are employed to give a full play to the superiority of the proposed SEM. The PIN diode with quasi one-dimensional structure has been analyzed, and the numerical results have demonstrated the efficiency and accuracy of the proposed method.

引用

页码：1337 / 1342

页数：6

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