Computer simulation of defect production and behaviour in displacement cascades in metals

被引:0
|
作者
Bacon, DJ [1 ]
Gao, F [1 ]
Barashev, AV [1 ]
Osetsky, YN [1 ]
机构
[1] Univ Liverpool, Dept Engn, Liverpool L69 3GH, Merseyside, England
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recent research using molecular dynamics to simulate radiation damage due to displacement cascades in metals is reviewed. It includes results dealing with the effect on defect formation of primary knock-on atom energy and irradiation temperature. Clear dependencies and trends have emerged in these areas. In terms of the development of models to describe the evolution of radiation damage microstructure, the important parameters are not only the total number of Frenkel defects but also the distribution of their population in clusters and the form and mobility of these clusters. Results on these aspects are reviewed and it is shown that computer simulation is providing detailed information that paves the way for successful development of models of the evolution of damage beyond the stage of the cascade process.
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页码:617 / 628
页数:12
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