Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions

This article discusses the formation of embedded indium nitride (InN) nanoclusters (NCs) in silica matrix through sequential implantation of 890keV In2+ and 140keV N+ ions. The implanted samples were subjected to post-implantation annealing at 500 degrees C in nitrogen atmosphere. Investigations carried out on the implanted samples using glancing incidence X-ray diffraction, high-resolution transmission electron microscopy and Raman spectroscopy gave clear evidence for the formation of InN nanoclusters. Alongside with InN NCs, we also notice the presence of indium oxide nanoclusters in the sample.