Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions

被引：1
|
作者：
Raman, P. Santhana [1 ,2 ]
Nair, K. G. M. [2 ]
Ghatak, Jay [3 ]
Bhatta, Umananda M. [3 ]
Satyam, P. V. [3 ]
Kalavathi, S. [2 ]
Panigrahi, B. K. [2 ]
Ravichandran, V. [1 ]
机构：
[1] Univ Madras, Ctr Mat Sci, Dept Nucl Phys, Madras 600025, Tamil Nadu, India
[2] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
[3] Inst Phys, Bhubaneswar 751005, Orissa, India
来源：
JOURNAL OF EXPERIMENTAL NANOSCIENCE | 2013年 / 8卷 / 7-8期
关键词：
ion implantation; indium nitride; indium oxide; embedded nanoclusters; silica; INN; GROWTH;
D O I：
10.1080/17458080.2011.630034
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This article discusses the formation of embedded indium nitride (InN) nanoclusters (NCs) in silica matrix through sequential implantation of 890keV In2+ and 140keV N+ ions. The implanted samples were subjected to post-implantation annealing at 500 degrees C in nitrogen atmosphere. Investigations carried out on the implanted samples using glancing incidence X-ray diffraction, high-resolution transmission electron microscopy and Raman spectroscopy gave clear evidence for the formation of InN nanoclusters. Alongside with InN NCs, we also notice the presence of indium oxide nanoclusters in the sample.
引用
收藏
页码：957 / 964
页数：8
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