Light emission by semiconductor structure with quantum well and array of quantum dots

被引：9

作者：

Evtikhiev, VP ^{[1
]}

Konstantinov, OV ^{[1
]}

Matveentsev, AV ^{[1
]}

Romanov, AE ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 01期

关键词：

GaAs; Energy Level; Active Region; Magnetic Material; Electromagnetism;

D O I：

10.1134/1.1434517

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new type of composite active region of a laser, which contains an In0.2Ga0.8As quantum well (QW) and an array of InAs quantum dots (QDs) embedded in GaAs is studied. The QW acts as accumulator of injected carriers, and the QD array is the emitting system located in tunneling proximity to the QW. A theory for the calculation of electron and hole energy levels in the QD is developed. Occupation of the QDs due to the resonance tunneling of electrons and holes from the QW to the QD is considered; the conclusions are compared with the results obtained in studying an experimental laser with a combined active region. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：74 / 80

页数：7

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