Light emission by semiconductor structure with quantum well and array of quantum dots

被引：9
|
作者：
Evtikhiev, VP [1 ]
Konstantinov, OV [1 ]
Matveentsev, AV [1 ]
Romanov, AE [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 01期
关键词：
GaAs; Energy Level; Active Region; Magnetic Material; Electromagnetism;
D O I：
10.1134/1.1434517
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new type of composite active region of a laser, which contains an In0.2Ga0.8As quantum well (QW) and an array of InAs quantum dots (QDs) embedded in GaAs is studied. The QW acts as accumulator of injected carriers, and the QD array is the emitting system located in tunneling proximity to the QW. A theory for the calculation of electron and hole energy levels in the QD is developed. Occupation of the QDs due to the resonance tunneling of electrons and holes from the QW to the QD is considered; the conclusions are compared with the results obtained in studying an experimental laser with a combined active region. (C) 2002 MAIK "Nauka / Interperiodica".
引用
收藏
页码：74 / 80
页数：7
相关论文
共 50 条
  • [1] Light emission by semiconductor structure with quantum well and array of quantum dots
    V. P. Evtikhiev
    O. V. Konstantinov
    A. V. Matveentsev
    A. E. Romanov
    Semiconductors, 2002, 36 : 74 - 80
  • [2] White light emission from quantum well structured quantum dots
    Qian, Lei
    Yang, Yixing
    Han, Changfeng
    Cheng, Yuanyuan
    Chen, Ling
    Zhang, Ting
    Xue, Wei
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2015, 193 : 1 - 3
  • [3] Photon statistics and phonon signatures in the quantum light emission from semiconductor quantum dots
    Carmele, Alexander
    Kabuss, Julia
    Richter, Marten
    Knorr, Andreas
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS XV, 2011, 7937
  • [4] A series of double well semiconductor quantum dots
    Dorfs, D
    Eychmuller, A
    NANO LETTERS, 2001, 1 (11) : 663 - 665
  • [5] Light emission from quantum well excitons in semiconductor microcavities.
    Savona, V
    Tassone, F
    Piermarocchi, C
    Quattropani, A
    Schwendimann, P
    Andreani, LC
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12): : 1713 - 1716
  • [6] Quantum Light Source Based on Semiconductor Quantum Dots: A Review
    Li, Rusong
    Liu, Fengqi
    Lu, Quanyong
    PHOTONICS, 2023, 10 (06)
  • [7] Biexciton Emission in Semiconductor Quantum Dots br
    Huang, Peng
    Zhang, Yongyou
    Zhong, Haizheng
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2023, 50 (01):
  • [8] Electronic structure of semiconductor quantum dots
    Ramaniah, Lavanya M.
    Nair, Selvakumar V.
    Physica B: Condensed Matter, 1995, 212 (03): : 245 - 250
  • [9] Light emission silicon quantum dots
    III-Vs Review, 2001, 14 (02)
  • [10] Electronic structure of semiconductor quantum dots
    Hebei Univ, Baoding, China
    Guti Dianzixue Yanjiu Yu Jinzhan, 2 (165-172):
12345