Aqueous chemical growth of Cu2ZnSnS4 (CZTS) thin films: Air annealing and photoelectrochemical properties

被引：37
|
作者：
Shinde, N. M. [1 ]
Deshmukh, P. R. [1 ]
Patil, S. V. [1 ]
Lokhande, C. D. [1 ]
机构：
[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, MS, India
来源：
MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 05期
关键词：
Cu2ZnSnS4; Thin film; Chemical synthesis; X-ray diffraction; Optical properties; IONIC LAYER ADSORPTION; OPTICAL-PROPERTIES; DEPOSITION;
D O I：
10.1016/j.materresbull.2012.12.053
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In present investigation, Cu2ZnSnS4(CZTS) thin films have been deposited on to glass substrates by novel chemical successive ionic layer adsorption and reaction (SILAR) method. The effect of air annealing in the temperature range between 573 and 773 K on the structural, morphological, optical and electrical properties has been studied. The X-ray diffraction studies revealed the formation of polycrystalline CZTS films. The surface morphological study showed smooth, compact and uniform film formation after annealing formation. The band gap was in between range from 1.5 to 1.8 eV depending on annealing temperature. The thermo emf measurement revealed that the CZTS exhibits p-type electrical conductivity. Further, photoactivity of CZTS thin films was tested by forming the photoelectrochemical cell. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1760 / 1766
页数：7
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