Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

被引:1
|
作者
Vetter, Michael [1 ]
Schwuchow, Anka [1 ]
Andrae, Gudrun [1 ]
机构
[1] Leibniz Inst Photon Technol IPHT, Albert Einstein Str 9, D-07745 Jena, Germany
关键词
SOLAR-CELLS; COEFFICIENT; FILMS;
D O I
10.1063/1.4971279
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 mu m thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 mu m thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Room-Temperature Nanoimprint using Liquid-Phase Hydrogen Silsesquioxane with PDMS mold
    Kang, Yuji
    Okada, Makoto
    Nakamatsu, Ken-ichiro
    Haruyama, Yuichi
    Kanda, Kazuhiro
    Matsui, Shinji
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2009, 22 (02) : 193 - 194
  • [42] Study on antireflective glass by liquid-phase etching
    Wang, Qi
    Zhang, Yingchao
    Zhu, Dunzhi
    Xie, Guangming
    2011 CHINESE MATERIALS CONFERENCE, 2012, 27 : 1 - 5
  • [43] Liquid-phase electrodeposition of diamond-like carbon films on conducting glass substrates using a low deposition voltage at room temperature
    Wang, Yi
    Yang, Wensheng
    Chen, Chen
    CHEMISTRY LETTERS, 2008, 37 (06) : 636 - 637
  • [44] LIQUID-PHASE EPITAXY OF SILICON - POTENTIALITIES AND PROSPECTS
    KASS, D
    WARTH, M
    STRUNK, HP
    BAUSER, E
    PHYSICA B & C, 1985, 129 (1-3): : 161 - 165
  • [45] Photoassisted liquid-phase deposition of silicon dioxide
    Huang, CT
    Chang, PH
    Shie, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (06) : 2044 - 2048
  • [46] LOW-TEMPERATURE PHOTOLUMINESCENCE OF TE-DOPED GASB GROWN BY LIQUID-PHASE ELECTROEPITAXY
    IYER, S
    SMALL, L
    HEGDE, SM
    BAJAJ, KK
    ABULFADL, A
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5902 - 5909
  • [47] THE ROLE OF HYDROGEN IN SILICON LIQUID-PHASE EPITAXY
    BERGMANN, R
    KURIANSKI, J
    MATERIALS LETTERS, 1993, 17 (3-4) : 137 - 140
  • [48] SILICON LIQUID-PHASE EPITAXIALLY GROWN DIODES
    BALIGA, BJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C356 - C356
  • [49] AUTODOPING DURING SILICON LIQUID-PHASE EPITAXY
    BALIGA, BJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C125 - C125
  • [50] REFILLING SILICON GROOVES BY LIQUID-PHASE EPITAXY
    BALIGA, BJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2819 - 2823