Shubnikov-de Haas oscillations in the bulk Rashba semiconductor BiTeI

被引：53
|
作者：
Bell, C. [1 ]
Bahramy, M. S. [2 ]
Murakawa, H. [2 ]
Checkelsky, J. G. [2 ]
Arita, R. [2 ,3 ]
Kaneko, Y. [4 ]
Onose, Y. [3 ,4 ]
Tokunaga, M. [5 ]
Kohama, Y. [5 ]
Nagaosa, N. [2 ,3 ]
Tokura, Y. [2 ,3 ,4 ]
Hwang, H. Y. [1 ,2 ,6 ]
机构：
[1] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
[2] RIKEN ASI, CERG, Wako, Saitama 3510918, Japan
[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[4] JST, ERATO, Multiferro Project, Tokyo 1138656, Japan
[5] Univ Tokyo, Inst Solid State Phys, Int MegaGauss Sci Lab, Kashiwa, Chiba 2778581, Japan
[6] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA
来源：
PHYSICAL REVIEW B | 2013年 / 87卷 / 08期
基金：
日本学术振兴会;
关键词：
D O I：
10.1103/PhysRevB.87.081109
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bulk magnetoresistance quantum oscillations are observed in high quality single crystal samples of BiTeI. This compound shows an extremely large internal spin-orbit coupling, associated with the polarity of the alternating Bi, Te, and I layers perpendicular to the c axis. The corresponding areas of the inner and outer Fermi surfaces around the A point show good agreement with theoretical calculations, demonstrating that the intrinsic bulk Rashba-type splitting is nearly 360 meV, comparable to the largest spin-orbit coupling generated in heterostructures and at surfaces. DOI: 10.1103/PhysRevB.87.081109
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Anomalous Shubnikov-de Haas oscillations in two-dimensional systems
    Winkler, R
    Papadakis, SJ
    De Poortere, EP
    Lu, JP
    Shayegan, M
    PHYSICA B, 2001, 298 (1-4): : 13 - 17
  • [42] SHUBNIKOV-DE HAAS OSCILLATIONS IN GRAPHITE SELECTIVE SCATTERING BY CHARGED IMPURITIES
    BENDER, AS
    YOUNG, DA
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (02): : 631 - +
  • [43] Shubnikov-de Haas Oscillations in Semiconductors at the Microwave-Radiation Absorption
    Gulyamov, G.
    Erkaboev, U. I.
    Gulyamov, A. G.
    ADVANCES IN CONDENSED MATTER PHYSICS, 2019, 2019
  • [44] SHUBNIKOV-DE HAAS EFFECT IN HGSE
    PONOMAREV, AI
    POTAPOV, GA
    TSIDILKOVSKII, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (01): : 24 - 27
  • [45] SHUBNIKOV-DE HAAS EFFECT IN BISMUTH
    LERNER, LS
    PHYSICAL REVIEW, 1962, 127 (05): : 1480 - &
  • [46] SHUBNIKOV-DE HAAS EFFECT AND MAGNETIC
    SELLMYER, DJ
    GOLDSTEI.IS
    AVERBACH, BL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 294 - &
  • [47] DETECTION OF SHUBNIKOV-DE HAAS OSCILLATIONS IN N-TYPE GAAS
    MATVEENK.AV
    MELNIKOV, GD
    PARFENEV, RV
    SOVIET PHYSICS SOLID STATE,USSR, 1969, 10 (09): : 2243 - +
  • [48] Shubnikov-de Haas oscillations and electronic structure in the Dirac semimetal SrAgAs
    Zhu, Qinqing
    Wang, Qi
    Li, Liang
    Yang, Zhihua
    Yang, Jinhu
    Chen, Bin
    Cao, Chao
    Wang, Hangdong
    Du, Jianhua
    PHYSICAL REVIEW B, 2021, 104 (14)
  • [49] Shubnikov-de Haas oscillations in the heavy fermion α-YbAlB4
    O'Farrell, E. C. T.
    Tompsett, D. A.
    Horie, N.
    Nakatsuji, S.
    Sutherland, M. L.
    INTERNATIONAL CONFERENCE ON STRONGLY CORRELATED ELECTRON SYSTEMS (SCES 2011), 2012, 391
  • [50] INFLUENCE OF LEVEL BROADENING ON SHUBNIKOV-DE HAAS OSCILLATIONS IN HGSE AND HGCDSE
    GLUZMAN, NG
    PONOMAREV, AI
    POTAPOV, GA
    SABIRZYANOVA, LD
    TSIDILKOVSKII, IM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (03): : 271 - 275
12345