Real time observation of nanoscale multiple conductive filaments in PRAM by using advanced in-situ TEM

被引：0
|
作者：
Sun, J. [1 ]
Wu, X. [1 ]
Liu, Q. [2 ]
Liu, M. [2 ]
Sun, L. T. [1 ]
机构：
[1] Southeast Univ, Sch Elect Sci & Engn, Minist Educ, SEU FEI Nanopico Ctr,Key Lab MEMS, Nanjing 210096, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China
来源：
PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年
关键词：
Transmission electron microscopy (TEM); in-situ; resistive random access memory; conductive filaments; RESISTIVE SWITCHING MEMORIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the ZrO2-based device. Using in-situ transmission electron microscopy, we observe in real time that multiple conductive filaments (CFs) are formed across the ZrO2 layer between top electrode and bottom electrodes after forming. Various top electrode materials have been used, such as Cu, Ag, and Ni. Contrary to common belief, it is found that CF growth begins at the anode, rather than having to reach the cathode and grow backwards. Energy-dispersive X-ray spectroscopy results confirm that metal from the top electrode is the main composition of the CFs.
引用
收藏
页码：560 / 562
页数：3
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