Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy

被引：3
|
作者：
Titus, J. [1 ]
Nguyen, H. P. T. [2 ]
Mi, Z. [2 ]
Perera, A. G. U. [1 ]
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 12期
基金：
美国国家科学基金会;
关键词：
PHOTOLUMINESCENCE;
D O I：
10.1063/1.4798245
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798245]
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页数：3
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