Quantum well related conductivity and deep traps in SiGe/Si structures

被引：1
|
作者：
Antonova, IV
Golik, LL
Kagan, MS
Polyakov, VI
Rukavischnikov, AI
Rossukanyi, NM
Kolodzey, J
机构：
[1] RAS, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] RAS, Inst Radio Engn & Elect, Moscow 125009, Russia
[3] Univ Delaware, Newark, DE 19716 USA
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI | 2005年 / 108-109卷
关键词：
SiGe quantum well; vertical transport; deep-level transient spectroscopy; traps;
D O I：
10.4028/www.scientific.net/SSP.108-109.489
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report. Temperature activation of holes from the quantum well was found to determine the vertical current through Si/SiGe/Si structures at T > 160 K. At lower temperatures (T < 130 K), the current mechanism is attributed to a thermally activated tunneling of holes from quantum well. Deep traps are observed in the Si/SiGe/Si structures in high concentration (10(11) - 10(12) cm(-2)). Traps are most likely assistance in the current in the vertical Si/SiGe/Si structures as recombination centers near the QW.
引用
收藏
页码：489 / 494
页数：6
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