Quantum Well Infrared Photodetectors (QWIPs) Optimization Based on Dark Current Models Evaluation

被引:1
|
作者
Favero, Priscila P. [1 ]
Tanaka, Roberto Y. [1 ]
Vieira, Gustavo S. [1 ]
Muraro, Ademar, Jr. [1 ]
Abe, Nancy M. [1 ]
Passaro, Angelo [1 ]
机构
[1] Inst Adv Studies, Dept IEAv DCTA, Sao Jose Dos Campos, Brazil
关键词
QWIP; computational optimization; sequential tunneling; dark current;
D O I
10.1063/1.3671723
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we evaluate different dark current models applied in QWIPs. In order to avoid empirical parameters we calculate the sequential tunneling probability of the lowest energy state to reproduce the dark current properties. Using the same arguments, the photocurrent is replaced by the tunneling probability modulated by the optical matrix element. Considering the different tunneling models presented in literature we apply a genetic algorithm to evaluate the models role on the election of the optimized infrared sensor.
引用
收藏
页码:161 / 164
页数:4
相关论文
共 50 条
  • [21] Dark current in quantum dot infrared photodetectors
    Ryzhii, V
    Pipa, V
    Khmyrova, I
    Mitin, V
    Willander, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (12B): : L1283 - L1285
  • [22] Modeling the capture probability and enhancing the photoconductive gain in quantum well infrared photodetectors (QWIPs)
    Gadir, MA
    Harrison, P
    Soref, RA
    INFRARED PHYSICS & TECHNOLOGY, 2003, 44 (5-6) : 481 - 485
  • [23] ANALYSIS OF THE DARK CURRENT IN DOPED-WELL MULTIPLE QUANTUM WELL ALGAAS INFRARED PHOTODETECTORS
    PELVE, E
    BELTRAM, F
    BETHEA, CG
    LEVINE, BF
    SHEN, VO
    HSIEH, SJ
    ABBOTT, RR
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5656 - 5658
  • [24] Performance Improvement of Quantum Well Infrared Photodetectors Through Dark Current Reduction Factor
    El Tokhy, Mohamed S.
    Ali, Elsayed H.
    Polyutov, Sergey P.
    IETE JOURNAL OF RESEARCH, 2023, 69 (04) : 1726 - 1733
  • [25] Analysis of dark current characteristics of novel GaAs/AlGaAs quantum well infrared photodetectors
    Shi, Yan-Li
    Deng, Jun
    Du, Jin-Yu
    Lian, Peng
    Gao, Guo
    Chen, Jian-Xin
    Shen, Guang-Di
    Yin, Jie
    Wu, Xing-Hui
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (04): : 503 - 506
  • [26] Design issues relating to low temperature dark current in quantum well infrared photodetectors
    Singh, A
    Cardimona, DA
    PHOTODETECTORS: MATERIALS AND DEVICES II, 1997, 2999 : 46 - 54
  • [27] Influence of the recharging process on the dark current noise in quantum-well infrared photodetectors
    Rehm, R
    Schneider, H
    Walther, M
    Koidl, P
    APPLIED PHYSICS LETTERS, 2002, 80 (05) : 862 - 864
  • [28] Effect of in interdiffusion on dark current response of GaInP/GaAs quantum well infrared photodetectors
    Micallef, J
    Brincat, A
    ELECTRONICS LETTERS, 1999, 35 (19) : 1662 - 1664
  • [29] Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors
    Lin, L.
    Zhen, H. L.
    Li, N.
    Lu, W.
    Weng, Q. C.
    Xiong, D. Y.
    Liu, F. Q.
    APPLIED PHYSICS LETTERS, 2010, 97 (19)
  • [30] Offset in the dark current characteristics of photovoltaic double barrier quantum well infrared photodetectors
    Luna, E
    Guzmán, A
    Muñoz, E
    INFRARED PHYSICS & TECHNOLOGY, 2005, 47 (1-2) : 22 - 28