Electronic structure and structural phase stability of CuAlX2 (X = S, Se, Te) under pressure

被引:28
|
作者
Jayalakshmi, V [1 ]
Davapriya, S [1 ]
Murugan, R [1 ]
Palanivel, B [1 ]
机构
[1] Pondicherry Engn Coll, Dept Phys, Pondicherry 605014, India
关键词
semiconductors; high pressure; electronic structure; phase transitions; equation-of-state;
D O I
10.1016/j.jpcs.2005.08.092
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electronic and structural properties of chalcopyrite compounds CuAlX2 (X = S, Se, Te) have been studied using the first principle self-consistent Tight Binding Linear Muffin-Tin Orbital (TBLMTO) method within the local density approximation. The present study deals with the ground state properties, structural phase transition, equations of state and pressure dependence of band gap of CuAlX2 (S, Se, Te) compounds. Electronic structure and hence total energies of these compounds have been computed as a function of reduced volume. The calculated lattice parameters are in good agreement with the available experimental results. At high pressures, structural phase transition from bct structure (chalcopyrite) to Cubic structure (rock salt) is observed. The pressure induced structural phase transitions for CuAlS2, CuAlSe2, and CuAlTe2 are observed at 18.01, 14.4 and 8.29,GPa, respectively. Band structures at normal as well as for high-pressure phases have been calculated. The energy band gaps for the above compounds have been calculated as a function of pressure, which indicates the metallic character of these compounds at high-pressure fee phase. There is a large downshift in band gaps due to hybridatization of the noble-metal d levels with p levels of the other atoms. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:669 / 674
页数:6
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