Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate

被引：9

作者：

Zhu, Liping ^{[1
]}

Deng, Hongmei ^{[2
]}

Liu, Jian ^{[1
]}

Sun, Lin ^{[1
]}

Yang, Pingxiong ^{[1
]}

Jiang, Anquan ^{[3
]}

Chu, Junhao ^{[1
]}

机构：

[1] East China Normal Univ, Sch Informat Sci & Technol, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Shanghai Univ, Inst Mat, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R China

[3] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 387卷

基金：

中国国家自然科学基金;

关键词：

Polycrystalline deposition; Perovskite; Dielectric material; Ferroelectric materials;

D O I：

10.1016/j.jcrysgro.2013.10.039

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The multiferroic thin films of Lu1-xBixFeO3 (LBFOx, 0 <= x <= 0.10) were firstly prepared on LaNiO3 coating silicon substrates by the sol-gel method. Structural and morphological characterization of the LBFOx thin films was investigated by X-ray diffraction and atomic force microscopy, respectively. The remnant polarization of Bi-doped LuFeO3 thin film at room temperature reached to 3.1 and 3.6 mu C/cm(2) for x=0.05 and 0.10 at the electric field of 700 kV/cm, respectively. The ferroelectric polarization measurements indicate that the potential role of Bi doping in increasing the value of the polarization of LuFeO3 film, and the mechanisms for the U shaped frequency loss tangent curves was discussed. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：6 / 9

页数：4

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