Field-domain spintronics in magnetic semiconductor multiple quantum wells -: art. no. 035301

被引：31
|
作者：
Sánchez, D
MacDonald, AH
Platero, G
机构：
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[2] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA
[3] Univ Texas, Dept Phys, Austin, TX 78712 USA
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.65.035301
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We develop a theory of nonlinear growth direction transport in magnetically doped II-VI compound semiconductor multiple-quantum-well systems. We find that the formation of electric field domains can be controlled by manipulating the space dependence of the band electron spin polarization, using its exchange coupling to local moments. We emphasize the importance of band electron spin relaxation in limiting the strength of these effects.
引用
收藏
页码：1 / 10
页数：10
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