Theoretical study of quantum emitters in two-dimensional silicon carbide monolayers

被引:6
|
作者
Hassanzada, Q. [1 ]
Sarsari, I. Abdolhosseini [1 ]
Hashemi, A. [2 ]
Ghojavand, A. [1 ]
Gali, A. [3 ]
Abdi, M. [1 ]
机构
[1] Isfahan Univ Technol, Dept Phys, Esfahan 8415683111, Iran
[2] Aalto Univ, Dept Appl Phys, FI-00076 Aalto, Finland
[3] Budapest Univ Technol & Econ, Dept Atom Phys, Budafoki Ut 8, H-1111 Budapest, Hungary
关键词
CENTERS; ENERGY;
D O I
10.1103/PhysRevB.102.134103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic and optical features of some potential single-photon sources in two-dimensional silicon carbide monolayers is studied via ab initio calculations and group theory analyses. A few point defects in three charge states (negative, positive, and neutral) are considered. By applying performance criteria, Stone-Wales defects without and with combination of antisite defects are studied in detail. The formation energy calculations reveal that neutral and positive charge states of these defects are stable. We compute the zero-phonon-line energy, the Huang-Rhys (HR) factor, and the photoluminescence spectrum for the available transitions in different charge states. The calculated HR values and the related Debye-Waller factors guarantee that the Stone-Wales defects have a high potential of performing as a promising single-photon emitter.
引用
收藏
页数:8
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