GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

被引：2

作者：

Lin, Yong ^{[1
]}

Leung, Benjamin ^{[1
]}

Li, Qiming ^{[1
]}

Figiel, Jeffrey. J. ^{[1
]}

Wang, George T. ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 427卷

关键词：

Nanostructures; Molecular beam epitaxy; Nanomaterials; Semiconducting III-V materials; Light emitting diodes; YELLOW LUMINESCENCE; GROWTH; SILICON; HETEROSTRUCTURES; NANOCOLUMNS; SAPPHIRE; CATALYST;

D O I：

10.1016/j.jcrysgro.2015.07.006

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (1 (1) over bar 02) r-plane sapphire substrates. Dislocation free [11 (2) over bar0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {10 (1) over bar0} side facets, which appear due to a decrease in relative growth rate of the {10 (1) over bar0} facets to the {10 (1) over bar1} and {10 (1) over bar1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：67 / 71

页数：5

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