Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes

被引：28
|
作者：
Long, Hao [1 ]
Li, Songzhan [1 ,2 ]
Mo, Xiaoming [1 ]
Wang, Haoning [1 ]
Huang, Huihui [1 ]
Chen, Zhao [1 ]
Liu, Yuping [1 ]
Fang, Guojia [1 ]
机构：
[1] Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Dept Elect Sci & Technol, Sch Phys & Technol,Minist Educ China, Wuhan 430072, Hubei, Peoples R China
[2] Wuhan Text Univ, Sch Elect & Elect Engn, Wuhan 430073, Hubei, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 12期
基金：
中国国家自然科学基金;
关键词：
GAN; FABRICATION; ARRAYS;
D O I：
10.1063/1.4821346
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Light-emitting diodes (LEDs) with MgZnO/ZnO/MgZnO double heterojunction structure have been fabricated and the room temperature electroluminescence (EL) spectra have been studied. With the help of double heterostructure, LEDs show better visible EL performance than that of LED with ordinary p-i-n structure. By replacing ZnO film with ZnO nanorod arrays in this double heterostructure, strong ultraviolet EL emission around 380 nm was achieved. The ZnO-nanorod-based double heterostructured light-emitting diode exhibits superior stability with an intensity degradation of less than 3% over 8 h. The EL mechanisms were discussed in terms of carrier confinement and carrier transport based on semiconductor heterojunction theory. (C) 2013 AIP Publishing LLC.
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页数：4
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