Gate polarity dependence of impact ionization probabilities in metal-oxide-silicon structures under Fowler-Nordheim stress

被引：9
|
作者：
Samanta, P [1 ]
Sarkar, CK [1 ]
机构：
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, W Bengal, India
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 02期
关键词：
D O I：
10.1016/S0038-1101(01)00261-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A theoretical investigation on the gate polarity dependence of Fowler-Nordheim (FN) tunneling electron initiated impact ionization probabilities in the bulk silicon dioxide (SiO2) films as well as hole injection from the anode material (n(+) poly-Si gate or silicon substrate) in metal-oxide-silicon devices is presented. Our theoretical results of the gate polarity dependence of the probabilities of various impact ionization processes under constant current FN stress correlate the experimentally observed positive charge generation/trapping and stress-induced trap creation in thick to thin SiO2 films. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码：279 / 285
页数：7
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