Ionic Electrodeposition Simulation of CdTe Thin Films

被引：1

作者：

Ueng, Herng-Yih ^{[1
]}

Yang, Shu-Ying ^{[1
]}

Chou, Jung-Chuan ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan

[2] Natl Yunlin Univ Sci & Technol, Grad Sch Elect Engn, Touliu, Yunlin, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 12期

关键词：

Potential of perfect stoichiometry; linear-sweep voltammetry; electrodeposition; stoichiometry;

D O I：

10.1007/s11664-008-0549-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modified Engelken's kinetic model, which is based on the Butler-Volmer equation, was developed and simulated to predict the potential at which perfect stoichiometry is achieved in linear-sweep voltammetry. The simulation results were verified experimentally using electrodeposition and the following were determined: the exact potential at which intrinsic CdTe with perfect stoichiometry can be electrodeposited and the deviation from stoichiometry, which can be controlled accurately by adjustment of the electrodeposition potential. Moreover, we found that native nondegenerate p-CdTe and n-CdTe could also be deposited. In this research, the simulation parameters for Engelken's model were established and corrected. Good agreement was found between the theoretical and experimental results, and accurate compound compositions were predicted.

引用

页码：1821 / 1827

页数：7

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