Study of 3C-SiC nucleation on (0001) 6H-SiC nominal surfaces by the CF-PVT method

被引：9

作者：

Latu-Romain, L. ^{[1
]}

Chaussende, D. ^{[1
]}

Chaudouet, P. ^{[1
]}

Robaut, F. ^{[2
]}

Berthome, G. ^{[3
]}

Pons, M. ^{[3
]}

Madar, R. ^{[1
]}

机构：

[1] ENSPG, UMR 5628, Mat & Genie Phys Lab, F-38402 St Martin Dheres, France

[2] INPG, Consortium Moyens Technol Communs, F-38402 St Martin Dheres, France

[3] ENSEEG, UMR 5616, Lab Thermodynam & Physicochim Met, F-38402 St Martin Dheres, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Nucleation; Morphological stability; Growth from vapour; Semiconducting silicon compounds;

D O I：

10.1016/j.jcrysgro.2004.11.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

3C-SiC nucleation on (0 0 0 1) 6H-SiC nominal surfaces was investigated during the heating-up step of the continuous feed-physical vapour transport (CF-PVT) growth technique. We focused on the heteropolytypic 6H-3C transition under silicon-rich gas phase for temperatures from 1800 to 2000 degrees C. Seed polarity effects were studied. The 3C proportion reached a maximum for a well-defined temperature which was higher on the C face than on the Si face. The 2D nucleation threshold for the 3C polytype was around 1825 degrees C on the Si face. 3C formation was closely connected to the surface morphology, i.e. to the development of facets (on-axis regions) on the Si face. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：E609 / E613

页数：5

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