A Flexible Transient Biomemristor Based on Hybrid Structure HfO2/BSA:Au Double Layers

Biomemristors have attracted increasing attention in neuromorphic computing as artificial biosynapses for wearable and implantable electronic systems. So far, biomemristors have achieved a series of neural outstanding functions, such as long-term enhancement and long-term inhibition, spiking-time-dependent plasticity, and paired impulse promotion, which has further developed memristors in the field of neurobionics. However, there is a problem in conventional memristors regarding the growth position and nucleation dynamics of the conductive filaments since they cause unstable switching parameters. In this study, a new hybrid structure with HfO2/BSA:Au (bovine serum doped with nanogold) is designed to improve biomemristor performance. The Ag/HfO2/BSA:Au/Pt stacked devices show a reversible and excellent bipolar resistive switching behavior. Moreover, the device can faithfully emulate the apoptotic process of biological synapses. Also, the same structure is constructed on a polydimethylsiloxane flexible substrate to examine the biosynapse's functional performance under bending conditions. Finally, the memristor cell can be completely dissolved in deionized water. The hybrid biomemristor can open up a new route to improve the reliability of the biomemristor based on the overall device performance of the BSA:Au, which could significantly accelerate hybrid biomemristor practical applications in wearable, degradable, or implantable electronic systems.