Low operation current of Si/HfO2 double layers based RRAM device with insertion of Si film

被引：3

作者：

Ding, Xiangxiang ^{[1
]}

Wang, Xiangyu ^{[1
]}

Feng, Yulin ^{[1
]}

Shen, Wensheng ^{[1
]}

Liu, Lifeng ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / SG期

基金：

中国国家自然科学基金;

关键词：

Titanium nitride - Silicon - Energy dispersive spectroscopy - Hafnium oxides - Tin;

D O I：

10.35848/1347-4065/ab6b7b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, TiN/Si/HfO2/Pt resistive random access memory devices are fabricated. The device stacks are described with high-resolution transmission electron microscope image and energy dispersive spectroscopy element analysis. Also, stable cycle-to-cycle and device-to-device distributions under 1 mu A current compliance are demonstrated. The device exhibits high reliability (with retention over 10(4) s under 85 degrees C) and high endurance characteristic (nearly 10(5) cycles under pulse stimulation). The formation and rupture of the conductive filament in HfO2 layer achieves resistance change, and the interfacial layer between Si and HfO2 layers avoids current overshoot and contributes to the law operation current performance. (C) 2020 The Japan Society of Applied Physics

引用

页数：5

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