Simulation Geometry Rasterization for Applications Toward Graphene Interconnect Characterization

被引：0
|
作者：
Rautio, Brian J. [1 ]
Long, Qi [2 ]
Agrawal, Amit [1 ]
El Sabbagh, Mahmoud A. [1 ]
机构：
[1] Syracuse Univ, Dept Elect Engn & Comp Sci, Syracuse, NY 13244 USA
[2] Syracuse Univ, Dept Phys, Syracuse, NY 13244 USA
来源：
2012 IEEE INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (EMC) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we present a novel methodology for geometric rasterization of arbitrary 3D planar geometries, and apply it to perform electromagnetic simulation based calibration for accurate high-frequency measurements of Graphene conductivity. The conductivity measurements may find application in the area of high-frequency Graphene-based circuits, specifically that of interconnects. Preliminary experimental and simulation results are shown and discussed.
引用
收藏
页码：406 / 410
页数：5
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