Planar native-oxide-based AlGaAs-GaAs-InGaAs quantum well microdisk lasers

被引：13

作者：

Ries, MJ ^{[1
]}

Chen, EI ^{[1
]}

Holonyak, N ^{[1
]}

Iovino, GM ^{[1
]}

Minervini, AD ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.115692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the 300 K photopumped (pulsed) laser operation of ultrathin (similar to 0.15 mu m) planar microdisk lasers. The tiny lasers employ the wet oxidation of an AlGaAs layer beneath the disks to form semiconductor cavities that are in solid contact but optically isolated from the GaAs substrate. The resulting microcavity lasers operate at low pump intensities and exhibit spectra characteristic of whispering gallery mode microdisk lasers. (C) 1996 American Institute of Physics.

引用

页码：1540 / 1542

页数：3

共 50 条

[21] Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon
Zubov, F., I
Moiseev, E., I
Nadtochiy, A. M.
Fominykh, N. A.
Ivanov, K. A.
Makhov, I. S.
Dragunova, A. S.
Maximov, M., V
Vorobyev, A. A.
Mozharov, A. M.
Mintairov, S. A.
Kalyuzhnyy, N. A.
Gordeev, N. Yu
Kryzhanovskaya, N., V
Zhukov, A. E.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (07)
[22] Specific Features of the Current-Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots
Zubov, F., I
Moiseev, E., I
Kornyshov, G. O.
Kryzhanovskaya, N., V
Shernyakov, Yu M.
Payusov, A. S.
Kulagina, M. M.
Kalyuzhnyi, N. A.
Mintairov, S. A.
Maximov, M., V
Zhukov, A. E.
TECHNICAL PHYSICS LETTERS, 2019, 45 (10) : 994 - 996
[23] Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer
Kryzhanovskaya, N. V.
Moiseev, E. I.
Polubavkina, Yu. S.
Maximov, M. V.
Kulagina, M. M.
Troshkov, S. I.
Zadiranov, Yu. M.
Lipovskii, A. A.
Baidus, N. V.
Dubinov, A. A.
Krasilnik, Z. F.
Novikov, A. V.
Pavlov, D. A.
Rykov, A. V.
Sushkov, A. A.
Yurasov, D. V.
Zhukov, A. E.
OPTICS EXPRESS, 2017, 25 (14): : 16754 - 16760
[24] High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers
Li, HX
Reinhardt, F
Birch, L
Bradford, G
JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 181 - 184
[25] MBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers
Strasser, G
Gianordoli, S
Schrenk, W
Gornik, E
Mücklich, A
Helm, M
JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 197 - 201
[26] Strained InGaAs/AlGaAs/GaAs-quantum cascade lasers
Gianordoli, S
Schrenk, W
Hvozdara, L
Finger, N
Strasser, G
Gornik, E
APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3361 - 3363
[27] High speed data transmission using directly modulated microdisk lasers based on InGaAs/GaAs quantum well-dots
Zubov, Fedor
Maximov, Mikhail
Kryzhanovskaya, Natalia
Moiseev, Eduard
Muretova, Maria
Mozharov, Alexey
Kaluzhnyy, Nikolay
Mintairov, Sergey
Kulagina, Marina
Ledentsov, Nikolay, Jr.
Chorchos, Lukasz
Zhukov, Alexey
OPTICS LETTERS, 2019, 44 (22) : 5442 - 5445
[28] STRAINED-LAYER INGAAS/GAAS/ALGAAS SINGLE QUANTUM WELL LASERS WITH HIGH INTERNAL QUANTUM EFFICIENCY
LARSSON, A
CODY, J
LANG, RJ
APPLIED PHYSICS LETTERS, 1989, 55 (22) : 2268 - 2270
[29] GROWTH AND CHARACTERIZATION OF ALGAAS/GAAS QUANTUM WELL LASERS
BURNHAM, RD
STREIFER, W
PAOLI, TL
HOLONYAK, N
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 370 - 382
[30] HIGHLY EFFICIENT PSEUDOMORPHIC INGAAS/GAAS/ALGAAS SINGLE QUANTUM-WELL LASERS FOR MONOLITHIC INTEGRATION
LARSSON, A
CODY, J
FOROUHAR, S
LANG, RJ
APPLIED PHYSICS LETTERS, 1990, 56 (18) : 1731 - 1733

← 1 2 3 4 5 →