A new compact temperature-compensated CMOS current reference

被引：91
|
作者：
Fiori, F [1 ]
Crovetti, PS [1 ]
机构：
[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2005年 / 52卷 / 11期
关键词：
analog integrated circuits; current reference; curvature compensation; MOS integrated circuits; temperature compensation; temperature drift;
D O I：
10.1109/TCSII.2005.852529
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a new circuit integrated on silicon, which generates temperature-independent bias currents. Such a circuit is firstly employed to obtain a current reference with first-order temperature compensation, then it is modified to obtain second-order temperature compensation. The operation principle of the new circuits is described and the relationships between design and technology process parameters are derived. These circuits have been designed by a 0.35 mu m BiCMOS technology process and the thermal drift of the reference current has been evaluated by computer simulations. They show good thermal performance and in particular, the new second-order temperature-compensated current reference has a mean temperature drift of only 28 ppm/degrees C in the temperature range between -30 degrees C and 100 degrees C.
引用
收藏
页码：724 / 728
页数：5
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