Chemisorption of a Ag atom on a Si(100) 2x1 surface: Local surface deformation

被引:13
|
作者
Okon, JC [1 ]
Joachim, C [1 ]
机构
[1] CEMES,LOE,CNRS,F-31055 TOULOUSE,FRANCE
关键词
chemisorption; semi-empirical models and model calculations; surface relaxation and reconstruction;
D O I
10.1016/S0039-6028(96)01563-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the initial step of the Si(100) surface metallization, it is shown that chemisorption of a Ag atom in a cave site is due to the Si(100) surface local deformation to match the small Si-Ag bond length. With a frozen Si(100)2x1 surface, Ag is not adsorbed in a cave site but laterally, bonded to a single surface Si. The STM image calculated with Ag in a cave site is ovoidal, extending over the two bonded Si. This shows that the appearance of Ag in an STM image is due to the local electronic structure of the Si-Ag-Si bonds and not to the vibrations of Ag parallel to the surface. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:L409 / L413
页数:5
相关论文
共 50 条
  • [21] ADSORPTION OF ETHYLENE ON THE SI(100)-(2X1) SURFACE
    HUANG, C
    WIDDRA, W
    WEINBERG, WH
    SURFACE SCIENCE, 1994, 315 (1-2) : L953 - L958
  • [22] CHEMISORPTION OF ATOMIC-HYDROGEN ON GE(100)2X1 SURFACE
    SAKURAI, T
    HAGSTRUM, HD
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (07): : 936 - 936
  • [23] HYDROGEN CHEMISORPTION AND THE STRUCTURE OF THE DIAMOND C(100)-(2X1) SURFACE
    HAMZA, AV
    KUBIAK, GD
    STULEN, RH
    SURFACE SCIENCE, 1990, 237 (1-3) : 35 - 52
  • [24] Selectivity of the chemisorption of vinylacetic acid on the Si(001)2X1 surface
    Hwang, HN
    Baik, JY
    An, KS
    Lee, SS
    Kim, YS
    Hwang, CC
    Kim, BS
    JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (24): : 8379 - 8384
  • [25] THE DYNAMICS OF SURFACE REARRANGEMENTS IN SI ADATOM DIFFUSION ON THE SI(100)(2X1) SURFACE
    SRIVASTAVA, D
    GARRISON, BJ
    JOURNAL OF CHEMICAL PHYSICS, 1991, 95 (09): : 6885 - 6891
  • [26] Comparative study of the structural and electronic properties of the surface Si(100)(2x1)-Sb and Si(100)(2x1)-As
    Gonzalez-Mendez, ME
    de la Garza, L
    Takeuchi, N
    REVISTA MEXICANA DE FISICA, 1998, 44 (04) : 381 - 384
  • [27] Si2H6 Dissociative Chemisorption and Dissociation on Si(100)-(2x1) and Ge(100)-(2x1)
    Veyan, Jean-Francois
    Choi, Heesung
    Huang, Min
    Longo, R. C.
    Ballard, Josh B.
    McDonnell, Stephen
    Nadesalingam, Manori P.
    Dong, Hong
    Chopra, Irinder S.
    Owen, James H. G.
    Kirk, Wiley P.
    Randall, John N.
    Wallace, Robert M.
    Cho, Kyeongjae
    Chabal, Yves J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (50): : 24534 - 24548
  • [28] THE GROWTH OF AG ON SI(100)-2X1
    BORENSZTEIN, Y
    ALAMEH, R
    APPLIED SURFACE SCIENCE, 1993, 65-6 : 735 - 741
  • [29] Atomic structure of the Te/Si(100)-(2x1) surface
    Wiame, F
    Dumont, J
    Sporken, R
    Verstraete, M
    Gonze, X
    PHYSICAL REVIEW B, 2005, 72 (03):
  • [30] Deposition of sulfur on Si(100)2x1: Surface restoration
    Papageorgopoulos, A
    SOLID STATE COMMUNICATIONS, 1997, 101 (05) : 383 - 387