Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis

被引：3
|
作者：
Chakraborty, Apurba [1 ]
Ghosh, Saptarsi [2 ]
Mukhopadhyay, Partha [3 ]
Das, Subhashis [4 ]
Bag, Ankush [4 ]
Biswas, Dhrubes [5 ]
机构：
[1] NIT Agartala, Dept Elect & Commun Engn, Jirania 799046, Tripura, India
[2] DRDO, Solid State Phys Lab, Delhi 11005, India
[3] Univ Cent Florida, CREOL, 4000 Cent Florida Blvd, Orlando, FL 32816 USA
[4] IIT Mandi, Sch Comp & Elect Engn, Kamand 175005, Himachal Prades, India
[5] IIT Kharagpur, Dept E&ECE, Kharagpur 721302, W Bengal, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 113卷
关键词：
PYROELECTRIC PROPERTIES;
D O I：
10.1016/j.spmi.2017.10.033
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of trap energy states in AlGaN/InGaN/GaN heterostructure is investigated by temperature dependent threshold voltage measurement from 298 K to 373 K. It is found that the threshold voltage of AlGaN/InGaN/GaN structure decreases from - 6.52 V to -6.90 V with temperature increase from 298 K to 348 K. But for the temperature higher than 348 K, the threshold voltage starts to increase and reaches to - 6.75 V at 373 K. However, the threshold voltage for AlGaN/GaN structure decreases consistently from -5.32 V to -6.4 V for entire range of temperature. The decrease of threshold voltage is attributed to the surface donor trap charges for both the heterostructures. Furthermore, the acceptor trap charges might have contributed for temperature above 348 K, and hence the increase of threshold voltage is observed in AlGaN/InGaN/GaN heterostructure. Higher crystal defects, resulted from lower growth temperature, might be responsible for the formation of these acceptor trap levels in InGaN layer. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：147 / 152
页数：6
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