Na transport in bilayer MoS2 and MoS2-WS2 heterojunction with S vacancy defect: First-principles study
被引:3
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作者:
Xiao, Jin
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机构:
Hunan Univ Technol, Sch Sci, Zhuzhou 412007, Peoples R ChinaHunan Univ Technol, Sch Sci, Zhuzhou 412007, Peoples R China
Xiao, Jin
[1
]
Zhou, Juan
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机构:
Univ South China, Coll Mech Engn, Hengyang 421001, Peoples R ChinaHunan Univ Technol, Sch Sci, Zhuzhou 412007, Peoples R China
Zhou, Juan
[2
]
Chen, Ling-Na
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机构:
Univ South China, Comp Sch, Hengyang 421001, Peoples R ChinaHunan Univ Technol, Sch Sci, Zhuzhou 412007, Peoples R China
Chen, Ling-Na
[3
]
Chen, Jian
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机构:
Changsha Univ Sci & Technol, Coll Energy & Power Engn, Changsha 410076, Peoples R ChinaHunan Univ Technol, Sch Sci, Zhuzhou 412007, Peoples R China
Chen, Jian
[4
]
机构:
[1] Hunan Univ Technol, Sch Sci, Zhuzhou 412007, Peoples R China
[2] Univ South China, Coll Mech Engn, Hengyang 421001, Peoples R China
[3] Univ South China, Comp Sch, Hengyang 421001, Peoples R China
[4] Changsha Univ Sci & Technol, Coll Energy & Power Engn, Changsha 410076, Peoples R China
ELASTIC BAND METHOD;
METAL DICHALCOGENIDES;
DIFFUSION;
HETEROSTRUCTURES;
SITES;
OXIDE;
D O I:
10.1063/5.0096098
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Based on first-principles calculations, the diffusion properties of Na+ in bilayer MoS2 and the MoS2-WS2 heterojunction were investigated. Owing to the similar structures, the diffusion properties of Na are almost identical in both systems. On perfect surfaces, the diffusion energy barrier is smaller than 0.1 eV. The diffusion characteristics of Na+ ions between layers are related to the size of the system. For a small size (<3 nm(2)), the Na+ diffusion energy barrier is around 0.40 eV because of sliding between layers. With the size of the system increasing, the energy barrier for Na+ diffusion between layers increases to 0.90 eV. S vacancy defects can trap Na+ ions and hinder Na+ diffusion. The diffusion energy barrier on the surface with S vacancy defects will increase to around 0.5 eV. When Na ions are transported between layers, they are tightly bound by S vacancy defects. The energy barrier exceeds 2.0 eV. (C) 2022 Author(s).
机构:
Tianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R ChinaTianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China
Zhang, Xuejing
Mi, Wenbo
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Tianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R ChinaTianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China
Mi, Wenbo
Wang, Xiaocha
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机构:
Tianjin Univ Technol, Sch Elect Informat Engn, Tianjin Key Lab Film Elect & Communicate Devices, Tianjin 300191, Peoples R ChinaTianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China
Wang, Xiaocha
Cheng, Yingchun
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机构:
KAUST, PSE Div, Thuwal 239556900, Saudi ArabiaTianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China
Cheng, Yingchun
Schwingenschloegl, Udo
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机构:
KAUST, PSE Div, Thuwal 239556900, Saudi ArabiaTianjin Univ, Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China
机构:
Harvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
Harvard Univ, Inst Appl Computat Sci, Cambridge, MA 02138 USAHarvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
Tritsaris, Georgios A.
Sensoy, Mehmet Gokhan
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机构:
Recep Tayyip Erdogan Univ, Dept Phys, TR-53000 Rize, TurkeyHarvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
Sensoy, Mehmet Gokhan
Shirodkar, Sharmila N.
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机构:
Harvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USAHarvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
Shirodkar, Sharmila N.
Kaxiras, Efthimios
论文数: 0引用数: 0
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机构:
Harvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
Harvard Univ, Dept Phys, Cambridge, MA 02138 USAHarvard Univ, John A Paulson Sch Engn & Appl Sci, Cambridge, MA 02138 USA
机构:
Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R ChinaTongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
Leng, Senlin
Zhang, Qiao
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机构:
East China Jiaotong Univ, Sch Mat Sci & Engn, Nanchang 330013, Jiangxi, Peoples R ChinaTongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
Zhang, Qiao
Guo, Lei
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机构:
Tongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R ChinaTongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
Guo, Lei
Huang, Yue
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机构:
Guizhou Univ, Coll Mat & Met, Guiyang 550025, Peoples R ChinaTongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
Huang, Yue
Ebenso, Eno E.
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机构:
Univ South Africa, Inst Nanotechnol & Water Sustainabil, Coll Sci Engn & Technol, ZA-1710 Johannesburg, South AfricaTongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
Ebenso, Eno E.
Marzouki, Riadh
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机构:
King Khalid Univ, Dept Chem, Coll Sci, Abha 61413, Saudi Arabia
Univ Sfax, Dept Chem, Fac Sci, Sfax 3038, TunisiaTongren Univ, Sch Mat & Chem Engn, Tongren 554300, Peoples R China
机构:
Xian Polytech Univ, Sch Text Sci & Engn, Xian 710048, Shaanxi, Peoples R China
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
Xian Polytech Univ, Key Lab Funct Text Mat & Product, Minist Educ, Xian 710048, Shaanxi, Peoples R ChinaXian Polytech Univ, Sch Text Sci & Engn, Xian 710048, Shaanxi, Peoples R China
Miao, Yaping
Bao, Hongwei
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机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R ChinaXian Polytech Univ, Sch Text Sci & Engn, Xian 710048, Shaanxi, Peoples R China
Bao, Hongwei
Fan, Wei
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Xian Polytech Univ, Sch Text Sci & Engn, Xian 710048, Shaanxi, Peoples R China
Xian Polytech Univ, Key Lab Funct Text Mat & Product, Minist Educ, Xian 710048, Shaanxi, Peoples R ChinaXian Polytech Univ, Sch Text Sci & Engn, Xian 710048, Shaanxi, Peoples R China
Fan, Wei
Li, Yan
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机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R ChinaXian Polytech Univ, Sch Text Sci & Engn, Xian 710048, Shaanxi, Peoples R China
Li, Yan
Ma, Fei
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机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R ChinaXian Polytech Univ, Sch Text Sci & Engn, Xian 710048, Shaanxi, Peoples R China