Spectral analysis of InGaAs/GaAs quantum-dot lasers

被引：28
|
作者：
Smowton, PM [1 ]
Johnston, EJ
Dewar, SV
Hulyer, PJ
Summers, HD
Patanè, A
Polimeni, A
Henini, M
机构：
[1] Univ Wales, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 15期
关键词：
D O I：
10.1063/1.124954
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 mu m). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)02741-2].
引用
收藏
页码：2169 / 2171
页数：3
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