Electronic structures of wide band-gap (AlN)(m)(GaN)(n)[001] superlattices

被引：0
|
作者：
Tian, ZJ [1 ]
DharmaWardana, MWC [1 ]
Lewis, LJ [1 ]
机构：
[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：473 / 478
页数：6
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