5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

被引：14

作者：

Dong, Zhihua ^{[1
]}

Tan, Shuxin ^{[1
]}

Cai, Yong ^{[1
]}

Chen, Hongwei ^{[3
]}

Liu, Shenghou ^{[3
]}

Xu, Jicheng ^{[4
]}

Xue, Lu ^{[4
]}

Yu, Guohao ^{[1
]}

Wang, Yue ^{[1
]}

Zhao, Desheng ^{[2
]}

Hou, Keyu ^{[2
]}

Chen, Kevin J. ^{[3
]}

Zhang, Baoshun ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Labatory Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[2] Chinese Acad Sci, Nano Fabricat Facil, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[3] Hong Kong Univ Sci & Technol, Kowloon, Hong Kong, Peoples R China

[4] Suzhou Silikron Semicond Technol Corp Ltd, Suzhou, Peoples R China

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 03期

关键词：

Metals - Aluminum oxide - High electron mobility transistors - Alumina - Electromagnetic pulse - Gallium nitride - Threshold voltage - Gate dielectrics - III-V semiconductors - Drain current - Oxide semiconductors - Substrates - Atomic layer deposition - MOS devices - Wide band gap semiconductors;

D O I：

10.1049/el.2012.3153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally-off AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrate were fabricated with the fluorine-based treatment technique. By employing a 20nm-thick Al2O3 gate dielectric deposited by atomic layer deposition, the fabricated MOS-HEMT exhibits a large positive threshold voltage of +3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off-state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS-HEMT power switches.

引用

页码：221 / 222

页数：2

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